![]() Huang, Zan Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017 ![]() ![]() Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors, IEEE Power Electronics Magazine, September, 2017 Parikh, Primit Smith, Kurt Barr, Ronald et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017 Asaib, GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges, Aug 2018 Zhan Wang, Yifeng Wu, Jim Honea, Liang Zhou, Paralleling GaN HEMTs for Diode-free Bridge Power Converters, Dec 2018īarr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018 Pushing the Boundaries of High Voltage GaN Power Conversion Topologyīest-in-class reliability Select your preferred supplier:ĭesign Files for Evaluation Kits that have been Discontinued Topology Transphorm delivers an easy-to-use platform to investigate the benefits of GaN with a number of evaluation kits in various topologies. Partner Power Adapter Designs using Transphorm GaN Part Number Power Adapter (Open Frame) Reference Designs Part Number ![]()
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